H₃N (ammonia nitride or related nitrogen-hydrogen ceramic) is an experimental ceramic compound in the nitride family, synthesized under high pressure or specialized conditions. While not yet widely commercialized, nitrogen-based ceramics of this type are investigated for applications requiring lightweight, hard, and thermally stable materials in extreme environments. Research into such compounds targets next-generation aerospace, electronics, and wear-resistant components where conventional ceramics reach performance limits.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 12.07 | GPa | — | ||
Poisson's Ratio(ν) | 0.2800 | - | — | ||
Shear Modulus(G) | 6.480 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 971 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 4.515 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 2.990 | - | — | ||
Electronic Dielectric Tensor(ε∞) | Matrix (redacted) | - | — | ||
Total Dielectric Tensor(ε) | Matrix (redacted) | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.00520 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.2852 | eV/atom | — |