H2 Ho1 is a semiconductor material based on holmium compounds, likely a rare-earth semiconductor or intermetallic phase used in specialized electronic and photonic applications. This material represents an experimental or niche composition within the rare-earth semiconductor family, offering potential for high-temperature electronics, magnetic devices, or optoelectronic systems where holmium's unique electronic and magnetic properties provide functional advantages over conventional semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 88.40 | GPa | — | ||
Shear Modulus(G) | 57.42 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.01980 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.7470 | eV/atom | — |