H2 Er1 is a semiconductor compound based on erbium hydride, representing a rare-earth hydride material class under active research for advanced electronic and photonic applications. This material family is explored for potential use in high-temperature electronics, quantum devices, and specialized optical systems where erbium's unique electronic properties can be leveraged, though commercial deployment remains limited and the material is primarily of interest to researchers and specialized applications engineers.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 13,029.2 | ksi | — | ||
Shear Modulus(G) | 8,740 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.06870 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.7450 | eV/atom | — |