H1 Ta2 is a tantalum-based semiconductor compound, likely a tantalum dichalcogenide or similar binary phase used in research and advanced device applications. This material belongs to the family of transition metal compounds being investigated for next-generation electronics, photonics, and quantum applications where tantalum's properties—including high atomic number, corrosion resistance, and electronic tunability—offer advantages over conventional semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00350 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.1370 | eV/atom | — |