H1Au1O2 is an experimental gold oxide semiconductor compound combining metallic gold with oxygen in a defined stoichiometric ratio. This material belongs to the family of precious metal oxides under active research for optoelectronic and catalytic applications, where the unique electronic properties arising from gold's d-band structure offer potential advantages over conventional semiconductor oxides. The compound is not yet established in mainstream industrial production but represents a research-stage material of interest in fields requiring chemically stable, noble-metal-based semiconductors with potential for high-performance device applications.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 9,665.9 | ksi | — | ||
Shear Modulus(G) | 4,917.8 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.201 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.4230 | eV/atom | — |