GeZrOFN

semiconductor

· GeZrOFN

GeZrOFN is an experimental oxynitride semiconductor compound combining germanium, zirconium, oxygen, and nitrogen elements. This material belongs to the emerging class of mixed-anion semiconductors being researched for advanced optoelectronic and photocatalytic applications where conventional binary semiconductors reach performance limits. GeZrOFN and related oxynitride systems are primarily under investigation in academic and industrial research settings for potential use in wide-bandgap device engineering and visible-light photocatalysis, offering designers a tunable material platform at the intersection of oxide and nitride semiconductor families.

photocatalytic water splittingvisible-light photocatalysiswide-bandgap semiconductorsoxynitride optoelectronicsthin-film device researchsolar energy conversion

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.000	eV	—
Magnetic Moment(μB)	-6.193e-16	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.6200	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GeZrOFN

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control