GeTiOFN

semiconductor

· GeTiOFN

GeTiOFN is an experimental oxynitride semiconductor compound containing germanium, titanium, oxygen, and nitrogen phases. This material family is under investigation in research settings for next-generation optoelectronic and photocatalytic applications, where the mixed-anion composition (oxygen + nitrogen) offers tunable bandgap and electronic properties distinct from conventional binary semiconductors. While not yet established in mainstream industrial production, oxynitride semiconductors are particularly promising for visible-light photocatalysis, potentially outperforming traditional oxides or nitrides alone.

photocatalysis (research)visible-light water splittingenvironmental remediationadvanced optoelectronics (development stage)bandgap engineering applications

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.100	eV	—
Magnetic Moment(μB)	1.281e-15	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.5200	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GeTiOFN

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control