GeTaN3 is a germanium tantalum nitride ceramic compound, representing a research-phase material in the refractory nitride family. This compound is investigated primarily for high-temperature and semiconductor applications where conventional nitrides may reach performance limits, though it remains largely in exploratory development rather than established industrial production.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 1.334 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 1.060 | eV/atom | — |