GeSnO2S

semiconductor

· GeSnO2S

GeSnO₂S is a quaternary semiconductor compound combining germanium, tin, oxygen, and sulfur elements, representing an emerging material in the transition metal chalcogenide and mixed-anion semiconductor family. This is primarily a research-stage material being investigated for optoelectronic and photovoltaic applications, where the tunable bandgap and mixed anionic composition offer potential advantages over conventional binary or ternary semiconductors for solar cells, photodetectors, and light-emitting devices. Its notable characteristic is the ability to engineer electronic properties through compositional variation, making it of interest to researchers exploring next-generation semiconductor alternatives to conventional silicon and III-V materials.

thin-film photovoltaicsphotodetectorsoptoelectronic devicessemiconductor researchbandgap engineeringemerging solar cells

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.200	eV	—
Magnetic Moment(μB)	-0.000124	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.7400	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GeSnO2S

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control