GeSnO2N is an experimental oxynitride ceramic compound combining germanium, tin, oxygen, and nitrogen elements. This material belongs to the family of mixed-valence transition metal oxynitrides, which are primarily research-phase compounds being investigated for advanced electronic and photocatalytic applications. The nitrogen incorporation into a germanium-tin oxide matrix is designed to modify electronic band structure and enhance functional properties compared to conventional oxides.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.8050 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.8200 | eV/atom | — |