GeSnN3

ceramic

· GeSnN3

GeSnN3 is an experimental ternary nitride ceramic compound combining germanium, tin, and nitrogen elements. This material belongs to the family of group IV nitride semiconductors and is primarily of research interest for advanced electronic and photonic applications where conventional semiconductors reach their performance limits. As a relatively unexplored composition, GeSnN3 is being investigated for potential use in high-temperature electronics, wide-bandgap devices, and optoelectronic systems where the unique properties of mixed-cation nitride systems may offer advantages over binary alternatives like GaN or AlN.

research semiconductorshigh-temperature electronicswide-bandgap optoelectronicsadvanced photonic devicesexperimental materials development

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	1.828	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.460	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GeSnN3

Electrical Properties

Other Properties

Regulatory Screening

Environmental