GeSiO₃ is a germanium silicate compound that belongs to the family of mixed-oxide semiconductors and ceramic materials. It combines germanium and silicon in an oxidized matrix, making it of interest for optoelectronic and photonic applications where the bandgap and refractive index properties of germanium-silicate systems are exploited. This material remains largely in research and development phases, with potential applications in integrated photonics, infrared optical components, and specialized sensor technologies where the germanium-silicon oxide platform offers advantages over pure silica or germanium alternatives in terms of cost, processability, or tailored optical properties.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 2.063 | eV | — | ||
| ↳ | 5.500 | eV | — | ||
Magnetic Moment(μB) | 0.000143 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf)2 entries | -2.029 | eV/atom | — | ||
| ↳ | 0.5600 | eV/atom | — |