GeSiO2S

semiconductor

· GeSiO2S

GeSiO₂S is an experimental quaternary semiconductor compound combining germanium, silicon, oxygen, and sulfur—a chalcogenide glass or mixed-anion semiconductor material still primarily in research development rather than established industrial production. This material family is investigated for infrared optics, nonlinear optical applications, and potential photonic devices where the combination of glass-forming properties with semiconducting behavior offers advantages over single-component systems. Its mixed composition allows tuning of bandgap and refractive index properties, making it notable for applications requiring transparency in mid-to-far infrared wavelengths where conventional glasses fail.

infrared optics and windowsnonlinear optical devicesphotonic researchfiber optic components (developmental)thermal imaging systems (candidate material)

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.300	eV	—
Magnetic Moment(μB)	0.000164	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.9400	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GeSiO2S

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control