GeSe2 is a binary chalcogenide semiconductor compound combining germanium and selenium, belonging to the family of IV-VI semiconductors and amorphous chalcogenide glasses. It is primarily investigated for infrared optics, phase-change memory devices, and photonic applications, where its wide transparency window in the infrared spectrum and tunable optical properties make it valuable for imaging systems and optical data storage. As a research-stage material, GeSe2 offers potential advantages over conventional semiconductors in flexible electronics and emerging memory technologies, though industrial adoption remains limited compared to more established chalcogenides like As₂Se₃ or commercial phase-change materials.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 3,483.8 | ksi | — | ||
Poisson's Ratio(ν) | 0.2500 | - | — | ||
Shear Modulus(G) | 2,383 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1675 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 2.380 | eV | — | ||
| ↳ | 1.236 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 13.09 | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij)2 entries | 0.04000 | C/m² | — | ||
| ↳ | 0.4355 | C/m² | — | ||
Piezoelectric Stress Tensor(eij) | Matrix (redacted) | C/m² | — | ||
Seebeck Coefficient(S) | -207.3 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf)2 entries | -0.3904 | eV/atom | — | ||
| ↳ | -0.2271 | eV/atom | — |