GeSe2 is a binary chalcogenide semiconductor compound combining germanium and selenium, belonging to the family of IV-VI semiconductors and amorphous chalcogenide glasses. It is primarily investigated for infrared optics, phase-change memory devices, and photonic applications, where its wide transparency window in the infrared spectrum and tunable optical properties make it valuable for imaging systems and optical data storage. As a research-stage material, GeSe2 offers potential advantages over conventional semiconductors in flexible electronics and emerging memory technologies, though industrial adoption remains limited compared to more established chalcogenides like As₂Se₃ or commercial phase-change materials.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 3,483.8 | ksi | DFT · OptB88vdW | ||
Poisson's Ratio(ν) | 0.2500 | - | DFT · OptB88vdW | ||
Shear Modulus(G) | 2,383 | ksi | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1675 | lb/in³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)3 entries | 2.380 | eV | Measured | ||
| ↳ | 1.236 | eV | DFT · OptB88vdW | ||
| ↳ | 2.055 | eV | DFT · TBmBJ | ||
Dielectric Constant (Relative Permittivity)(εr) | 13.09 | - | DFT · OptB88vdW | ||
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries | 9.734 | - | DFT · OptB88vdW | ||
| ↳ | 7.099 | - | DFT · TBmBJ | ||
Electron Effective Mass(m*e) | 0.6267 | me | DFT · OptB88vdW · 27°C | ||
Hole Effective Mass(m*h) | 0.8333 | me | DFT · OptB88vdW · 27°C | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW | ||
Piezoelectric Modulus(eij)2 entries | 0.4355 | C/m² | DFT · OptB88vdW | ||
| ↳ | 0.04000 | C/m² | DFT · PBE | ||
Piezoelectric Stress Tensor(eij) | Matrix (redacted) | C/m² | DFT · PBE | ||
Thermoelectric Power Factor(PF)2 entries | 0.00163 | W/(m·K²) | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 0.00260 | W/(m·K²) | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Seebeck Coefficient(S)2 entries | -207.3 | μV/K | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 355.5 | μV/K | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Spectroscopic Limited Maximum Efficiency (SLME)(SLME) | 21.78 | % | DFT · TBmBJ |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf)2 entries | -0.2271 | eV/atom | DFT · OptB88vdW | ||
| ↳ | -0.3904 | eV/atom | Measured |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data