GeSb4Te7 is a chalcogenide ceramic compound belonging to the germanium-antimony-tellurium (GST) material family, which exhibits reversible phase-change behavior between crystalline and amorphous states. This material is primarily investigated for phase-change memory (PCM) applications in data storage and computing, where rapid, electrically-induced transitions between phases enable non-volatile information storage with potentially higher density and faster switching than conventional flash memory. GeSb4Te7 represents a variation within the GST alloy system, tuned for specific thermal stability and switching characteristics relevant to next-generation memory devices and emerging neuromorphic computing architectures.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K)2 entries | 3,062 | ksi | — | ||
| ↳ | 5,027 | ksi | — | ||
Poisson's Ratio(ν) | 0.2300 | - | — | ||
Shear Modulus(G)2 entries | 2,149.8 | ksi | — | ||
| ↳ | 3,537.5 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.2232 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.2280 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Seebeck Coefficient(S) | -229.5 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.00180 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.1257 | eV/atom | — |