GeSb4Te4

ceramic

· JVASP-109740· GeSb4Te4

GeSb4Te4 is a chalcogenide compound belonging to the GeSbTe family of phase-change materials, engineered for reversible switching between amorphous and crystalline states. This material is primarily investigated for non-volatile memory applications, particularly in phase-change random access memory (PCRAM) and optical data storage, where its ability to undergo rapid, repeatable phase transitions enables high-speed write/erase cycles with excellent data retention. Compared to conventional flash memory, GeSb4Te4 offers potential advantages in scalability, endurance, and switching speed, making it a subject of active research for next-generation memory technologies.

phase-change memory (PCRAM)non-volatile data storageoptical recording mediamemory device researchhigh-speed switching applicationsemerging semiconductor technology

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Density(ρ)	0.2241	lb/in³	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.09100	eV	—
Magnetic Moment(μB)	0.000	µB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.000	eV/atom	—
Formation Energy(ΔHf)	-0.1008	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GeSb4Te4

Physical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental