GeSb4Te4 is a chalcogenide compound belonging to the GeSbTe family of phase-change materials, engineered for reversible switching between amorphous and crystalline states. This material is primarily investigated for non-volatile memory applications, particularly in phase-change random access memory (PCRAM) and optical data storage, where its ability to undergo rapid, repeatable phase transitions enables high-speed write/erase cycles with excellent data retention. Compared to conventional flash memory, GeSb4Te4 offers potential advantages in scalability, endurance, and switching speed, making it a subject of active research for next-generation memory technologies.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.2241 | lb/in³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 0.09100 | eV | DFT · OptB88vdW | ||
| ↳ | 0.00100 | eV | DFT · TBmBJ | ||
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries | 54.64 | - | DFT · OptB88vdW | ||
| ↳ | 60.78 | - | DFT · TBmBJ | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW | ||
Spectroscopic Limited Maximum Efficiency (SLME)(SLME) | 5.840 | % | DFT · TBmBJ |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -0.1008 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data