GeS2
semiconductorGeS2 is a binary semiconductor compound composed of germanium and sulfur, belonging to the chalcogenide glass and IV–VI semiconductor family. It is primarily investigated as a research material for infrared optics, nonlinear photonics, and solid-state electrolyte applications, where its wide bandgap and transmission properties in the mid-to-far infrared region make it valuable for lens and window components in thermal imaging and spectroscopy systems. GeS2 is less common in high-volume production than its silicon counterparts but offers advantages over alternatives in specific niche applications requiring chemical stability and transparency beyond the visible spectrum, particularly in aerospace thermal sensing and laboratory instrumentation.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K)2 entries | — | ksi | — | — | |
| ↳ | — | ksi | — | — | |
Poisson's Ratio(ν) | — | - | — | — | |
Shear Modulus(G)2 entries | — | ksi | — | — | |
| ↳ | — | ksi | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | — | lb/in³ | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | — | eV | — | — | |
| ↳ | — | eV | — | — | |
Dielectric Constant (Relative Permittivity)(εr) | — | - | — | — | |
Magnetic Moment(μB) | — | µB | — | — | |
Piezoelectric Modulus(eij)2 entries | — | C/m² | — | — | |
| ↳ | — | C/m² | — | — | |
Piezoelectric Stress Tensor(eij) | Matrix (redacted) | C/m² | — | — | |
Seebeck Coefficient(S) | — | µV/K | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | — | eV/atom | — | — | |
Formation Energy(ΔHf)2 entries | — | eV/atom | — | — | |
| ↳ | — | eV/atom | — | — |