GePbS2 is a mixed-metal chalcogenide ceramic compound combining germanium, lead, and sulfur. This material belongs to the family of IV-VI semiconducting chalcogenides and is primarily investigated in research contexts for optoelectronic and photonic applications where its narrow bandgap and thermal properties offer potential advantages. The compound is notable for applications requiring infrared transparency and nonlinear optical response, positioning it as an alternative to more conventional semiconductors in specialized photonic devices and thermal imaging systems.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 50.33 | GPa | — | ||
Poisson's Ratio(ν) | 0.3300 | - | — | ||
Shear Modulus(G) | 26.60 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 5.815 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.6730 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.06010 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.4476 | eV/atom | — |