GePbO3
semiconductorGePbO3 is a lead-germanate ceramic compound belonging to the oxide semiconductor family, combining germanium and lead oxides into a crystalline structure. This material remains primarily a research compound rather than a widely commercialized engineering material; it is investigated for potential applications in optoelectronic devices, photovoltaic systems, and specialized radiation detection where the high atomic mass of lead combined with germanium's semiconductor properties offers theoretical advantages over conventional alternatives. Its development context suggests exploration for high-energy sensing applications and advanced ceramic electronics, though practical industrial adoption remains limited pending further optimization of synthesis routes and performance validation.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 16,514 | ksi | — | ||
Poisson's Ratio(ν) | 0.2700 | - | — | ||
Shear Modulus(G) | 9,101.1 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.3352 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)3 entries | 1.688 | eV | — | ||
| ↳ | 0.2000 | eV | — | ||
| ↳ | 0.3330 range 0.000–0.6660median of 2 measurements | eV | — | ||
Magnetic Moment(μB)2 entries | 0.0000464 | μB | — | ||
| ↳ | 0.000 | µB | — | ||
Seebeck Coefficient(S) | -5.600 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.09300 | eV/atom | — | ||
Formation Energy(ΔHf)3 entries | -1.481 | eV/atom | — | ||
| ↳ | 0.9800 | eV/atom | — | ||
| ↳ | -1.472 | eV/atom | — |