GeP

Germanium phosphide (GeP) is a III-V binary semiconductor compound combining group IV germanium with group V phosphorus. It is primarily a research and development material explored for optoelectronic and high-frequency electronic applications, particularly in contexts where its direct bandgap and lattice properties offer advantages over more established semiconductors like GaP or InP. GeP remains largely in the experimental stage but holds potential for integrated photonics, solar cells, and high-speed transistors in niche applications where its electronic structure and thermal properties can be leveraged.