GeNbO2N

semiconductor

· GeNbO2N

GeNbO₂N is an experimental oxynitride semiconductor compound combining germanium, niobium, oxygen, and nitrogen elements. This material belongs to the emerging class of mixed-anion semiconductors, which are under research for optoelectronic and photocatalytic applications where conventional single-anion semiconductors show limitations. GeNbO₂N and related oxynitride systems are being investigated primarily in academic and industrial research settings for their potential to enable visible-light photocatalysis, photoelectrochemical water splitting, and next-generation semiconductor device architectures.

photocatalysis researchwater splitting applicationsvisible-light photodetectorssemiconductor device developmentenergy conversion researchexperimental optoelectronics

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.100	eV	—
Magnetic Moment(μB)	-2.989e-7	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.2800	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GeNbO2N

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control