GeLaN3 is a germanium-based nitride ceramic compound that belongs to the family of wide-bandgap semiconductors and refractory ceramics. This material is primarily of research and developmental interest rather than established industrial production, with potential applications in high-temperature electronics, optoelectronics, and thermal management systems where its nitride stability and thermal properties could offer advantages over traditional alternatives. The germanium-nitride system represents an emerging class of materials being explored for next-generation power devices and high-frequency applications where superior thermal conductivity and electrical isolation are needed.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 1.987 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 2.240 | eV/atom | — |