GeInON2

ceramic

· GeInON2

GeInON2 is a quaternary semiconductor ceramic compound combining germanium, indium, oxygen, and nitrogen, belonging to the oxynitride materials class. This is a research-stage compound with potential applications in advanced optoelectronic and high-temperature semiconductor devices, where the mixed anion chemistry (oxygen and nitrogen) can enable tunable bandgap and thermal stability beyond conventional binary or ternary semiconductors. The material family is of interest for next-generation wide-bandgap electronics and photonics, though industrial-scale production and standardized processing remain under development.

wide-bandgap semiconductorsoptoelectronic deviceshigh-temperature electronicsadvanced research applicationsphotonic materials development

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	1.421	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.440	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GeInON2

Electrical Properties

Other Properties

Regulatory Screening

Environmental