GeInO3 is an ternary oxide ceramic compound combining germanium, indium, and oxygen, belonging to the family of mixed-metal oxides. This material is primarily explored in research contexts for optoelectronic and semiconductor applications, where its bandgap and crystal structure offer potential advantages over binary oxides in transparent conducting films, photocatalytic devices, and high-frequency electronics.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.9987 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf)2 entries | -0.7280 | eV/atom | — | ||
| ↳ | 0.8000 | eV/atom | — |