GeInO2S

ceramic

· GeInO2S

GeInO₂S is a quaternary semiconductor ceramic compound combining germanium, indium, oxygen, and sulfur—a mixed-anion material in the emerging family of oxysulfide semiconductors. This is primarily a research-phase compound investigated for its tunable electronic bandgap and potential optoelectronic properties, positioning it as a candidate material for next-generation thin-film photovoltaics, photodetectors, and integrated photonic devices where conventional semiconductors face material or performance limitations.

thin-film photovoltaicsphotodetectors and sensorsintegrated photonicsoptoelectronic research devicesbandgap engineering applicationsexperimental semiconductor research

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	0.9977	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.9400	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GeInO2S

Electrical Properties

Other Properties

Regulatory Screening

Environmental