GeInO2F

semiconductor

· GeInO2F

GeInO₂F is an experimental semiconductor compound combining germanium, indium, oxygen, and fluorine—a rare quaternary oxide-fluoride system. This material remains largely in the research phase, with potential applications in optoelectronics and wide-bandgap semiconductor devices where the fluorine doping may engineer electronic properties distinct from conventional oxides; it represents an emerging platform for exploring how fluorine incorporation modifies band structure and charge transport in ternary oxide semiconductors.

experimental optoelectronicswide-bandgap semiconductorsresearch photonic devicestransparent electronicsadvanced ceramic semiconductorsmaterials research platforms

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.200	eV	—
Magnetic Moment(μB)	-2.076e-15	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.6600	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GeInO2F

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control