GeInO2F — Properties & Data | MatWorld

GeInO2F

semiconductor

· GeInO2F

GeInO₂F is an experimental semiconductor compound combining germanium, indium, oxygen, and fluorine—a rare quaternary oxide-fluoride system. This material remains largely in the research phase, with potential applications in optoelectronics and wide-bandgap semiconductor devices where the fluorine doping may engineer electronic properties distinct from conventional oxides; it represents an emerging platform for exploring how fluorine incorporation modifies band structure and charge transport in ternary oxide semiconductors.

experimental optoelectronicswide-bandgap semiconductorsresearch photonic devicestransparent electronicsadvanced ceramic semiconductorsmaterials research platforms

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

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Method

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.200	eV	DFT · GLLB-SC
Magnetic Moment(μB)	-2.076e-15	μB	DFT

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.6600	eV/atom	DFT

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

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GeInO2F

Electrical Properties

Other Properties

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Environmental

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