GeInN3

ceramic
· GeInN3

GeInN3 is a ternary nitride ceramic compound composed of germanium, indium, and nitrogen, belonging to the III-V nitride family of wide-bandgap semiconductors. This material is primarily of research and developmental interest rather than established in high-volume production, with potential applications in high-temperature and high-power electronic devices where its wide bandgap and thermal properties could offer advantages over conventional semiconductors. GeInN3 represents an emerging compound within the nitride semiconductor family, investigated for next-generation power electronics, RF (radio frequency) devices, and optoelectronic applications where superior thermal stability and high-field performance are critical.

high-power semiconductor deviceswide-bandgap electronics researchhigh-temperature RF componentsnext-generation power convertersexperimental optoelectronics

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65
Units:
siimperial
PropertyValueUnitConditionsSource
Band Gap(Eg)
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eV——
Magnetic Moment(μB)
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μB——
Verified Unverified Low confidence (<80%) Link to source
PropertyValueUnitConditionsSource
Formation Energy(ΔHf)
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eV/atom——
Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.