GeI₂ is a layered semiconductor compound composed of germanium and iodine, belonging to the family of group IV-VII chalcohalides. It is primarily investigated in research and emerging applications rather than established industrial production, with potential utility in optoelectronic devices, photodetectors, and next-generation thin-film solar cells due to its direct bandgap and layered crystal structure that enables efficient light-matter interaction.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 2,248.1 | ksi | — | ||
Poisson's Ratio(ν) | 0.2800 | - | — | ||
Shear Modulus(G) | 702 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1678 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 1.500 | eV | — | ||
| ↳ | 1.762 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 21.97 | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 0.5554 | C/m² | — | ||
Seebeck Coefficient(S) | -214.6 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.1612 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.2211 | eV/atom | — |