GeHfO3 is an experimental oxide semiconductor compound combining germanium and hafnium oxides, belonging to the family of high-k dielectric and wide-bandgap semiconductor materials. This material is primarily of research interest for advanced microelectronics and photonic device applications, where its potential high dielectric constant and thermal stability could enable miniaturized components or high-temperature operation; however, it remains in early-stage development with limited commercial deployment compared to established alternatives like HfO2 or GeO2.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 2.728 | eV | — | ||
| ↳ | 3.500 | eV | — | ||
Magnetic Moment(μB)2 entries | 0.000 | μB | — | ||
| ↳ | 0.000582 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf)2 entries | -2.660 | eV/atom | — | ||
| ↳ | 0.3000 | eV/atom | — |