GeHfO3

semiconductor
· GeHfO3

GeHfO3 is an experimental oxide semiconductor compound combining germanium and hafnium oxides, belonging to the family of high-k dielectric and wide-bandgap semiconductor materials. This material is primarily of research interest for advanced microelectronics and photonic device applications, where its potential high dielectric constant and thermal stability could enable miniaturized components or high-temperature operation; however, it remains in early-stage development with limited commercial deployment compared to established alternatives like HfO2 or GeO2.

advanced dielectrics for gate stackswide-bandgap semiconductorshigh-temperature electronicsphotonic integrated circuitsemerging device research

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
PropertyValueUnitConditionsSource
Band Gap(Eg)2 entries
eV
eV
Magnetic Moment(μB)2 entries
μB
μB
N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form / heat treatment / basis.
Verified Unverified Low confidence (<80%) Link to source
PropertyValueUnitConditionsSource
Formation Energy(ΔHf)2 entries
eV/atom
eV/atom
N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form / heat treatment / basis.
Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.