GeH4 (germane) is a hydride ceramic compound composed of germanium and hydrogen, typically encountered as a gas or precursor material rather than a conventional solid ceramic. This material is primarily significant in semiconductor and thin-film processing as a chemical vapor deposition (CVD) precursor for depositing germanium-based layers and devices, and represents an important compound within the broader family of group IV hydrides used in microelectronics fabrication. Engineers select GeH4 for applications requiring controlled germanium deposition, particularly in optoelectronic devices, integrated circuits, and specialized photonic applications where precise material composition and film quality are critical.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 438 | ksi | — | ||
Poisson's Ratio(ν) | -0.2900 | - | — | ||
Shear Modulus(G) | -2,403.3 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.05311 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.4779 | eV/atom | — | ||
Formation Energy(ΔHf) | 0.4768 | eV/atom | — |