GeH₃Cl is a germanium-based hydride chloride compound classified as a ceramic material, representing a specialized inorganic compound that bridges organometallic and ceramic chemistry. This material is primarily of research and exploratory interest rather than established industrial production, with applications under investigation in semiconductor processing, thin-film deposition, and advanced materials synthesis where controlled germanium incorporation is required. Engineers may consider GeH₃Cl in developmental contexts involving chemical vapor deposition (CVD) or metal-organic chemical vapor deposition (MOCVD) processes where precursor chemicals enable precise material engineering at the nanoscale.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 1,257.5 | ksi | — | ||
Poisson's Ratio(ν) | 0.3000 | - | — | ||
Shear Modulus(G) | 577.3 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.08342 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 4.615 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 6.027 | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij)2 entries | 0.2004 | C/m² | — | ||
| ↳ | 0.1236 | C/m² | — | ||
Piezoelectric Stress Tensor(eij) | Matrix (redacted) | C/m² | — | ||
Seebeck Coefficient(S) | -196.4 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.06370 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.1574 | eV/atom | — |