GeH3 (germane hydride) is a hydride ceramic compound based on germanium, representing an experimental material in the semiconductor and advanced ceramics research space. While not yet commercially established in mainstream engineering, germanium hydride compounds are investigated for potential applications in optoelectronics, thin-film deposition, and novel semiconductor architectures where germanium's electronic properties and chemical stability could offer advantages over conventional silicon-based alternatives. The material's ceramiclike mechanical characteristics suggest research interest in hybrid material systems combining hydride chemistry with rigid structural performance.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 1,409.8 | ksi | — | ||
Poisson's Ratio(ν) | 0.1500 | - | — | ||
Shear Modulus(G) | 1,492.4 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.09324 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.3122 | eV/atom | — | ||
Formation Energy(ΔHf) | 0.3112 | eV/atom | — |