GeAsP
ceramic· JVASP-75694· GeAsP
GeAsP is a quaternary III-V semiconductor compound combining germanium, arsenic, and phosphorus elements, typically studied as a lattice-matched or near-matched material for heteroepitaxial device structures. This is primarily a research and specialized optoelectronic material rather than a commodity ceramic, valued for its potential to bridge bandgap engineering needs in infrared photonics and high-speed electronic applications where precise lattice parameters are critical.
infrared optoelectronicssemiconductor heterostructureshigh-speed integrated circuitslattice-matched substratesresearch photonics devicesquantum well engineering
Compliance & Regulations
?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1699 | lb/in³ | — |
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.6275 | eV/atom | — | ||
Formation Energy(ΔHf) | 0.5940 | eV/atom | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.