GeAsP

ceramic

· JVASP-75694· GeAsP

GeAsP is a quaternary III-V semiconductor compound combining germanium, arsenic, and phosphorus elements, typically studied as a lattice-matched or near-matched material for heteroepitaxial device structures. This is primarily a research and specialized optoelectronic material rather than a commodity ceramic, valued for its potential to bridge bandgap engineering needs in infrared photonics and high-speed electronic applications where precise lattice parameters are critical.

infrared optoelectronicssemiconductor heterostructureshigh-speed integrated circuitslattice-matched substratesresearch photonics devicesquantum well engineering

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Density(ρ)	4.704	kg/m³	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	0.000	µB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.6275	eV/atom	—
Formation Energy(ΔHf)	0.5940	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GeAsP

Physical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental