GeAs is a III-V compound semiconductor composed of germanium and arsenic, belonging to the same material family as GaAs and InAs. While less common than its III-V cousins, GeAs is primarily investigated in research settings for optoelectronic and high-frequency applications, particularly where the band gap characteristics or lattice properties offer advantages over conventional semiconductors. The material's potential lies in integrated photonics, infrared detection, and high-speed transistor applications where its electronic properties could enable devices operating at different wavelengths or with improved performance compared to established alternatives.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 63.70 | GPa | — | ||
Poisson's Ratio(ν) | 0.2500 | - | — | ||
Shear Modulus(G) | 42.44 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 5.759 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 1.450 | eV | — | ||
| ↳ | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Seebeck Coefficient(S) | 0.1133 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.1089 | eV/atom | — | ||
Formation Energy(ΔHf) | 0.05868 | eV/atom | — |