GeAs2

semiconductor

· GeAs2

GeAs2 is a binary semiconductor compound composed of germanium and arsenic, belonging to the III-V semiconductor family. While not widely used in large-scale commercial applications, this material is primarily investigated in research contexts for optoelectronic and photonic devices, particularly for infrared applications and specialized detector systems where its bandgap properties may offer advantages over more conventional semiconductors like GaAs. Engineers considering GeAs2 should evaluate it as an emerging or experimental material option for niche photonic applications rather than as a mature, off-the-shelf engineering choice.

infrared detectorsoptoelectronic researchphotonic integrated circuitsspecialized semiconductor devicesthin-film applications

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	14.81	GPa	—
Shear Modulus(G)	11.63	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.100	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GeAs2

Mechanical Properties

Electrical Properties

Regulatory Screening

Environmental

Export Control