GeAlO2F

semiconductor

· GeAlO2F

GeAlO2F is an experimental fluoride-based semiconductor compound combining germanium, aluminum, oxygen, and fluorine elements. This material belongs to the family of wide-bandgap semiconductors and mixed-anion oxyfluorides, which are primarily of research interest for advanced optoelectronic and photonic applications. While not yet established in mainstream industrial production, compounds in this material class show potential for UV–visible light emission, scintillation detection, and integrated photonic devices where fluorine incorporation can modify bandgap and refractive properties compared to conventional oxide or nitride semiconductors.

research-phase optoelectronicsscintillation detectorsintegrated photonicsUV light sourcesradiation detection systemsexperimental semiconductor devices

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	3.400	eV	—
Magnetic Moment(μB)	2.858e-16	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.4200	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GeAlO2F

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control