GeAlN3

metal

· GeAlN3

GeAlN3 is a ternary nitride compound combining germanium, aluminum, and nitrogen, belonging to the III-V nitride semiconductor family. This material is primarily of research and developmental interest rather than established production use, with potential applications in wide-bandgap semiconductor devices, high-temperature electronics, and optoelectronics where improved thermal stability or lattice matching properties compared to conventional GaN or AlN might offer advantages.

wide-bandgap semiconductorshigh-temperature electronicsresearch optoelectronicspower device developmentlattice engineering for heterostructures

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	3.154	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.740	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

GeAlN3

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control