Ge8 S12 I8

semiconductor

· Ge8 S12 I8

Ge8S12I8 is a halide-containing chalcogenide semiconductor compound combining germanium, sulfur, and iodine in a 1:1.5:1 stoichiometric ratio. This material represents an emerging research compound within the halide perovskite and chalcogenide semiconductor family, with potential for optoelectronic and photovoltaic applications where tunable bandgap and mixed-anion chemistry offer advantages over conventional semiconductors. The incorporation of iodine as a halide dopant in a germanium sulfide matrix is of particular interest for solar cells, photodetectors, and next-generation light-emitting devices, though practical industrial adoption remains limited and the material is primarily studied in academic and specialized materials research contexts.

experimental photovoltaicsperovskite solar cellsphotodetector developmenthalide semiconductorsoptoelectronic researchnext-generation light-emitting devices

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.023	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.3030	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ge8 S12 I8

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control