Ge6 Sb4 O18

semiconductor

· Ge6 Sb4 O18

Ge₆Sb₄O₁₈ is a mixed-metal oxide semiconductor compound belonging to the germanium-antimony oxide family, which exhibits interesting photoelectric and thermal properties relevant to phase-change and optoelectronic applications. This material is primarily investigated in research contexts for optical data storage, infrared sensing, and thin-film photonic devices, where its tunable band gap and crystalline structure offer advantages over conventional semiconductors in specialized high-temperature or radiation-resistant environments. Compared to standard silicon-based semiconductors, such germanium-antimony oxides are valued for their enhanced optical absorption in specific wavelength ranges and potential use in non-volatile memory technologies.

optical data storage mediainfrared photonicsthin-film optoelectronicsphase-change memory researchhigh-temperature sensorsradiation-resistant semiconductors

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	3.037	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.612	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

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RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ge6 Sb4 O18

Electrical Properties

Other Properties

Regulatory Screening

Environmental

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