Ge₆N₈ is an experimental binary ceramic compound composed of germanium and nitrogen, belonging to the family of nitride semiconductors. This material is primarily of research interest as a potential wide-bandgap semiconductor, with studies exploring its fundamental properties and theoretical performance in electronic and photonic applications. Compared to more established nitride semiconductors like GaN and AlN, Ge₆N₈ remains largely in the development phase, with potential advantages in specific device architectures or thermal management scenarios that warrant further investigation by materials scientists and semiconductor researchers.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 177.6 | GPa | — | ||
Shear Modulus(G) | 81.29 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.989 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.09100 | eV/atom | — |