Ge5Te8As2 is a chalcogenide ceramic compound belonging to the germanium-tellurium-arsenic family, a class of materials studied for their unique layered crystal structures and tunable electronic properties. This composition represents research-stage materials with potential applications in phase-change memory, thermal management devices, and infrared optics, where the combination of these heavy elements provides interesting optical and thermal characteristics. The material's relatively low exfoliation energy suggests potential for producing two-dimensional nanostructures, making it of interest to researchers exploring next-generation thermoelectric, optoelectronic, and quantum device platforms.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Exfoliation Energy(Eexf) | 27.17 | meV/atom | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.2198 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 0.000 | eV | — | ||
| ↳ | 0.2870 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Seebeck Coefficient(S) | -269.2 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.01500 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.06234 | eV/atom | — |