Ge5 Te8 As2

semiconductor

· Ge5 Te8 As2

Ge5Te8As2 is a chalcogenide glass alloy combining germanium, tellurium, and arsenic—a compound from the family of amorphous semiconductors traditionally studied for infrared optics and electronic switching applications. This specific composition is primarily encountered in research contexts for non-crystalline semiconductors, with potential applications in infrared optical windows, phase-change memory devices, and thermal imaging systems where the combination of elements offers tunable bandgap and refractive index properties. The arsenic-tellurium-germanium system is notably valued in photonics and solid-state electronics because these materials can bridge the gap between crystalline semiconductors and glasses, enabling devices that require transparency in the infrared spectrum combined with controllable electrical switching behavior.

infrared optics and lensesphase-change memory and data storagethermal imaging sensorschalcogenide glass researchnon-linear optical applicationsswitching and memory devices

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.02250	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.06200	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ge5 Te8 As2

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control