Ge5 Te8 As2
semiconductorGe5Te8As2 is a chalcogenide glass alloy combining germanium, tellurium, and arsenic—a compound from the family of amorphous semiconductors traditionally studied for infrared optics and electronic switching applications. This specific composition is primarily encountered in research contexts for non-crystalline semiconductors, with potential applications in infrared optical windows, phase-change memory devices, and thermal imaging systems where the combination of elements offers tunable bandgap and refractive index properties. The arsenic-tellurium-germanium system is notably valued in photonics and solid-state electronics because these materials can bridge the gap between crystalline semiconductors and glasses, enabling devices that require transparency in the infrared spectrum combined with controllable electrical switching behavior.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |