Ge4 is a germanium-based semiconductor compound, likely representing a specific germanium polymorph or doped germanium variant used in optoelectronic and infrared device research. Germanium semiconductors are employed in infrared detectors, high-frequency transistors, and specialized photovoltaic applications where their narrow bandgap and high carrier mobility provide advantages over silicon, particularly in thermal imaging systems and space-qualified electronics. This material is notable in niche applications requiring superior infrared sensitivity or operation at elevated temperatures, though it remains less common in mainstream electronics compared to silicon due to higher cost and lower thermal stability.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 8,531.4 | ksi | — | ||
Shear Modulus(G) | 6,401 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00680 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.02000 | eV/atom | — |