Ge40Te5.3I8 is a chalcogenide glass semiconductor alloy, part of the germanium–tellurium–iodine family, primarily investigated for phase-change memory (PCM) and infrared photonic applications. This material composition is used in research and development for non-volatile data storage devices and IR optical components, where its amorphous-to-crystalline switching behavior enables reversible, fast switching cycles. The iodine doping modifies the thermal and electronic properties compared to binary Ge-Te systems, making it notable for tuning crystallization kinetics and optical transparency in the mid-IR spectrum.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.8000 | eV | — |