Ge₄Pb₁O₉ is an oxide semiconductor compound combining germanium and lead oxides, belonging to the family of mixed-metal oxide semiconductors. This material is primarily of research interest rather than established commercial production, with potential applications in optoelectronic devices, photovoltaic systems, and specialized sensing applications where the combined electronic properties of germanium and lead oxides could provide advantages over single-component alternatives.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 3.559 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.682 | eV/atom | — |