Ge3Sb2Te6 is a chalcogenide phase-change material composed of germanium, antimony, and tellurium, belonging to the family of materials that reversibly switch between amorphous and crystalline states upon thermal or electrical stimulation. This compound is primarily used in non-volatile memory applications and optical data storage, where its ability to rapidly and repeatedly transition between distinct structural phases enables reliable information storage and retrieval. Its selection over competing phase-change materials is driven by its optimized thermal stability, switching speed, and endurance characteristics, making it particularly valuable in advanced memory technologies where conventional approaches reach practical limits.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 5.999 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.06470 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.05498 | eV/atom | — |